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        六方氮化硼晶體20片裝

        簡要描述:六方氮化硼晶體20片裝 hBN(Hexagonal Boron Nitride)-Crystal
        晶體尺寸:~1mm
        電學性能:絕緣體/半導體
        晶體結構:六邊形
        晶胞參數:a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120°
        晶體類型:合成
        晶體純度:

        • 更新時間:2022-08-12
        • 產品型號:
        • 廠商性質:生產廠家
        • 訪  問  量:586

        詳細介紹

        六方氮化硼晶體20片裝 hBN(Hexagonal Boron Nitride)-Crystal
        晶體尺寸:~1mm
        電學性能:絕緣體/半導體
        晶體結構:六邊形
        晶胞參數:a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120°
        晶體類型:合成
        晶體純度:

        X-ray diffraction on a hexagonal boron nitride single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3

        Raman spectrum of a single crystal hexagonal boron nitride (h-BN). Measurement was performed with a 785nm Raman system at room temperature.

        Device at left side: Fabrication of a high mobiltity bilayer graphene. This field effect transistor is fabricated using the polymer 2D_CL_PC ( click here ). The device is composed out of four 2D layers. The bilayer graphene is encapsulated between two hexagonal boron nitride crystals (h-BN). The fourth layer is a thin layer of graphite (HOPG) which is used as a backgate. Scale bar is 20μm. Device at right side: This device is similar to the one at the left side, here we added on the top hexagonal boron nitride layer a gold electrode in order to apply a top gate voltage to the hBN encapsulated bilayer graphene. Scale bar is 20μm



         

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